IEEE - Institute of Electrical and Electronics Engineers, Inc. - Influence of interface fractal geometry on anamalous behaviour of capacity-voltage characteristic of metal-semiconductor contacts with Shottky barrier

2009 19th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2009)

Author(s): Torkhov, N.A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2009
Conference Location: Sevastopol, Ukraine, Ukraine
Conference Date: 14 September 2009
Page(s): 542 - 543
ISBN (Paper): 978-1-4244-4796-1
Regular:

With the use of a term of fractal surfaces there was proved that irregularities of a potential (barrier) and an electric charge in real metal-semiconductor interfaces with Shottky barrier had a... View More

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