IEEE - Institute of Electrical and Electronics Engineers, Inc. - The Nature of the Deep Hole Trap in MOS Oxides

Author(s): Howard S. Witham ; Patrick M. Lenahan
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1987
Volume: 34
Page(s): 1,147 - 1,151
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.1987.4337444
Regular:

We have investigated hole and electron trapping events at E' deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiations, electron spin resonance... View More

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