IEEE - Institute of Electrical and Electronics Engineers, Inc. - The Nature of the Deep Hole Trap in MOS Oxides
Author(s): | Howard S. Witham ; Patrick M. Lenahan |
Sponsor(s): | IEEE Nuclear and Plasma Sciences Society |
Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
Publication Date: | 1 December 1987 |
Volume: | 34 |
Page(s): | 1,147 - 1,151 |
ISSN (Paper): | 0018-9499 |
ISSN (Online): | 1558-1578 |
DOI: | 10.1109/TNS.1987.4337444 |
Regular:
We have investigated hole and electron trapping events at E' deep hole traps in metal-oxide-semicond