IEEE - Institute of Electrical and Electronics Engineers, Inc. - AlGaN/GaN HEMT temperature-dependent large-signal model thermal circuit extraction with verification through advanced thermal imaging

2009 IEEE 10th Annual Wireless and Microwave Technology Conference: An IEEE Industry/Government (WAMICON)

Author(s): Casto, M.J. ; Dooley, S.R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2009
Conference Location: Clearwater, FL, USA, USA
Conference Date: 20 April 2009
Page(s): 1 - 5
ISBN (CD): 978-1-4244-4565-3
ISBN (Paper): 978-1-4244-4564-6
DOI: 10.1109/WAMICON.2009.5207307
Regular:

Investigation has been done on procedure, development and verification of a large-signal, temperature-dependent model for Aluminum-Gallium-Nitride/Gallium-Nitride (AlGaN-GaN)... View More

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