IEEE - Institute of Electrical and Electronics Engineers, Inc. - Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique

2009 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Hehenberger, P. ; Aichinger, T. ; Grasser, T. ; Gos, W. ; Triebl, O. ; Kaczer, B. ; Nelhiebel, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2009
Conference Location: Montreal, QC, Canada, Canada
Conference Date: 26 April 2009
Page(s): 1,033 - 1,038
ISBN (CD): 978-1-4244-2889-2
ISBN (Paper): 978-1-4244-2888-5
ISSN (Paper): 1541-7026
DOI: 10.1109/IRPS.2009.5173406
Regular:

Data obtained by the recently developed on-the-fly charge-pumping technique has suggested a fast initial degradation and recovery of interface states during negative and/or bias temperature... View More

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