IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistors

2009 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Jen-Chou Tseng ; Jenn-Gwo Hwu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2009
Conference Location: Montreal, QC, Canada, Canada
Conference Date: 26 April 2009
Page(s): 777 - 778
ISBN (CD): 978-1-4244-2889-2
ISBN (Paper): 978-1-4244-2888-5
ISSN (Paper): 1541-7026
DOI: 10.1109/IRPS.2009.5173348
Regular:

The interface trap's characteristics in silicon dioxide induced by electrostatic discharge current impulse were studied using the transmission line pulsing technique and charge pumping method. It... View More

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