IEEE - Institute of Electrical and Electronics Engineers, Inc. - Critical gate voltage and digital breakdown: Extending post-breakdown reliability margin in ultrathin gate dielectric with thickness ≪ 1.6 nm

2009 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Lo, V.L. ; Pey, K.L. ; Ranjan, R. ; Tung, C.H. ; Shih, J.R. ; Wu, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2009
Conference Location: Montreal, QC, Canada, Canada
Conference Date: 26 April 2009
Page(s): 696 - 699
ISBN (CD): 978-1-4244-2889-2
ISBN (Paper): 978-1-4244-2888-5
ISSN (Paper): 1541-7026
DOI: 10.1109/IRPS.2009.5173332
Regular:

The saturation of a critical gate voltage at 2-2.4 V for SiON with thickness ≪ 1.6 nm (EOT ≪ 1.4 nm) extends the role of digital breakdown (BD) in prolonging progressive BD at nominal... View More

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