IEEE - Institute of Electrical and Electronics Engineers, Inc. - Description of Si-O bond breakage using pair-wise interatomic potentials under consideration of the whole crystal

2009 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Tyaginov, S.E. ; Gos, W. ; Grasser, T. ; Sverdlov, V. ; Schwaha, P. ; Heinzl, R. ; Stimpfl, F.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2009
Conference Location: Montreal, QC, Canada, Canada
Conference Date: 26 April 2009
Page(s): 514 - 522
ISBN (CD): 978-1-4244-2889-2
ISBN (Paper): 978-1-4244-2888-5
ISSN (Paper): 1541-7026
DOI: 10.1109/IRPS.2009.5173306
Regular:

We extend the McPherson model in a manner to capture the effect of the whole surrounding lattice on the siliconoxygen bond-breakage energetics. It is shown that the Mie- Gr√ľneisen potential with... View More

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