IEEE - Institute of Electrical and Electronics Engineers, Inc. - Time and temperature dependence of early stage Stress-Induced-Voiding in Cu/low-k interconnects

2009 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Croes, K. ; Wilson, C.J. ; Lofrano, M. ; Travaly, Y. ; De Roest, D. ; Tokei, Z. ; Beyer, G.P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2009
Conference Location: Montreal, QC, Canada, Canada
Conference Date: 26 April 2009
Page(s): 457 - 463
ISBN (CD): 978-1-4244-2889-2
ISBN (Paper): 978-1-4244-2888-5
ISSN (Paper): 1541-7026
DOI: 10.1109/IRPS.2009.5173297
Regular:

The time and temperature dependence of Stress-Induced-Voiding below and in copper VIA's with a diameter of 80nm integrated in a k=2.5 material was studied. The focus was on the early phase... View More

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