IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reliability for manufacturing on 45nm logic technology with high-k + metal gate transistors and Pb-free packaging

2009 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Kasim, R. ; Connor, C. ; Hicks, J. ; Jopling, J. ; Litteken, C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2009
Conference Location: Montreal, QC, Canada, Canada
Conference Date: 26 April 2009
Page(s): 350 - 354
ISBN (CD): 978-1-4244-2889-2
ISBN (Paper): 978-1-4244-2888-5
ISSN (Paper): 1541-7026
DOI: 10.1109/IRPS.2009.5173277
Regular:

This paper addresses several key aspects of integrated reliability for the Intel 45nm logic technology with high-K metal gate (HK+MG) transistors and Pb-free packaging. Significant changes in... View More

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