IEEE - Institute of Electrical and Electronics Engineers, Inc. - Statistical and scaling behavior of structural relaxation effects in phase-change memory (PCM) devices

2009 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Boniardi, M. ; Ielmini, D. ; Lavizzari, S. ; Lacaita, A.L. ; Redaelli, A. ; Pirovano, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2009
Conference Location: Montreal, QC, Canada, Canada
Conference Date: 26 April 2009
Page(s): 122 - 127
ISBN (CD): 978-1-4244-2889-2
ISBN (Paper): 978-1-4244-2888-5
ISSN (Paper): 1541-7026
DOI: 10.1109/IRPS.2009.5173236
Regular:

The phase-change memory (PCM) technology represents one of the most attractive concepts for next generation data storage. PCM behavior is mainly limited by the structural relaxation (SR) and by... View More

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