IEEE - Institute of Electrical and Electronics Engineers, Inc. - Deffect profiling in the SiO 2 / Al 2 O 3 interface using Variable T charge -T discharge Amplitude Charge Pumping (VT2ACP)

2009 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Zahid, M.B. ; Degraeve, R. ; Cho, M. ; Pantisano, L. ; Aguado, D.R. ; Van Houdt, J. ; Groeseneken, G. ; Jurczak, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2009
Conference Location: Montreal, QC, Canada, Canada
Conference Date: 26 April 2009
Page(s): 21 - 25
ISBN (CD): 978-1-4244-2889-2
ISBN (Paper): 978-1-4244-2888-5
ISSN (Paper): 1541-7026
DOI: 10.1109/IRPS.2009.5173219
Regular:

A Variable Tcharge-Tdischarge Amplitude Charge Pumping (VT2ACP) is used to profile defect in the SiO2 and Al2O3 separately in Flash Memory based devices. It is shown that by... View More

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