IEEE - Institute of Electrical and Electronics Engineers, Inc. - B/P doping in application of silicon oxynitride based integrated optics

2009 Conference on Lasers & Electro-Optics Europe & 11th European Quantum Electronics Conference (CLEO/EQEC)

Author(s): Sun, F. ; Hussein, M.G. ; Worhoff, K. ; Sengo, G. ; Driessen, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: Munich, Germany, Germany
Conference Date: 14 June 2009
Page(s): 1
ISBN (CD): 978-1-4244-4080-1
ISBN (Paper): 978-1-4244-4079-5
DOI: 10.1109/CLEOE-EQEC.2009.5196496
Regular:

Silicon oxynitride (SiON) is a highly transparent amorphous material over a wide range of wavelengths, and has won excellent reputations in its low loss, design flexibility and high thermal... View More

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