IEEE - Institute of Electrical and Electronics Engineers, Inc. - On-wafer integration of nitrides and Si devices: Bringing the power of polarization to Si

2009 IEEE MTT-S International Microwave Symposium Digest (MTT)

Author(s): Chung, J.W. ; Bin Lu ; Palacios, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: Boston, MA, USA, USA
Conference Date: 7 June 2009
Page(s): 1,117 - 1,120
ISBN (CD): 978-1-4244-2804-5
ISBN (Paper): 978-1-4244-2803-8
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2009.5165897
Regular:

The seamless integration of AlGaN/GaN transistors and Si CMOS electronics on the same chip will revolutionize digital and mixed signal electronics. In this talk we describe our group's effort on... View More

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