IEEE - Institute of Electrical and Electronics Engineers, Inc. - Integrated on-chip Ba 2 Ti 9 O 20 dielectric resonator oscillator in GaAs technology

2009 IEEE MTT-S International Microwave Symposium Digest (MTT)

Author(s): Freundorfer, A.P. ; Bijumon, P.V. ; Sayer, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: Boston, MA, USA, USA
Conference Date: 7 June 2009
Page(s): 1,105 - 1,108
ISBN (CD): 978-1-4244-2804-5
ISBN (Paper): 978-1-4244-2803-8
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2009.5165894
Regular:

We report for the first time a 26 GHz K/Ka-band dielectric resonator oscillator (DRO) in 0.8 µm GaAs MESFET that had the Ba2Ti9O20 dielectric resonator (DR) grown to the surface of the chip at a... View More

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