IEEE - Institute of Electrical and Electronics Engineers, Inc. - Integrated on-chip Ba 2 Ti 9 O 20 dielectric resonator oscillator in GaAs technology
2009 IEEE MTT-S International Microwave Symposium Digest (MTT)
| Author(s): | Freundorfer, A.P. ; Bijumon, P.V. ; Sayer, M. |
| Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
| Publication Date: | 1 June 2009 |
| Conference Location: | Boston, MA, USA, USA |
| Conference Date: | 7 June 2009 |
| Page(s): | 1,105 - 1,108 |
| ISBN (CD): | 978-1-4244-2804-5 |
| ISBN (Paper): | 978-1-4244-2803-8 |
| ISSN (Paper): | 0149-645X |
| DOI: | 10.1109/MWSYM.2009.5165894 |
Regular:
We report for the first time a 26 GHz K/Ka-band dielectric resonator oscillator (DRO) in 0.8 µm GaAs MESFET that had the Ba2Ti9O20 dielectric resonator (DR) grown to the surface of the chip at a... View More
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