IEEE - Institute of Electrical and Electronics Engineers, Inc. - High efficiency Class-E tuned Doherty amplifier using GaN HEMT

2009 IEEE MTT-S International Microwave Symposium Digest (MTT)

Author(s): Gil Wong Choi ; Hyoung Jong Kim ; Woong Jae Hwang ; Suk Woo Shin ; Jin Joo Choi ; Sung Jae Ha
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: Boston, MA, USA, USA
Conference Date: 7 June 2009
Page(s): 925 - 928
ISBN (CD): 978-1-4244-2804-5
ISBN (Paper): 978-1-4244-2803-8
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2009.5165849
Regular:

This paper describes the design and fabrication of a highly efficient switching-mode Class-E Doherty power amplifier using gallium nitride (GaN) high-electron mobility transistor (HEMT) for S-band... View More

Advertisement