IEEE - Institute of Electrical and Electronics Engineers, Inc. - Raman channel temperature measurement of SiC MESFET as a function of ambient temperature and DC power

2009 IEEE MTT-S International Microwave Symposium Digest (MTT)

Author(s): Ponchak, G.E. ; Eldridge, J.I. ; Krainsky, I.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: Boston, MA, USA, USA
Conference Date: 7 June 2009
Page(s): 885 - 888
ISBN (CD): 978-1-4244-2804-5
ISBN (Paper): 978-1-4244-2803-8
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2009.5165839
Regular:

Raman spectroscopy is used to measure the junction temperature of a Cree SiC MESFET as a function of the ambient temperature and DC power. The carrier temperature, which is approximately equal to... View More

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