IEEE - Institute of Electrical and Electronics Engineers, Inc. - Raman channel temperature measurement of SiC MESFET as a function of ambient temperature and DC power
2009 IEEE MTT-S International Microwave Symposium Digest (MTT)
| Author(s): | Ponchak, G.E. ; Eldridge, J.I. ; Krainsky, I.L. |
| Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
| Publication Date: | 1 June 2009 |
| Conference Location: | Boston, MA, USA, USA |
| Conference Date: | 7 June 2009 |
| Page(s): | 885 - 888 |
| ISBN (CD): | 978-1-4244-2804-5 |
| ISBN (Paper): | 978-1-4244-2803-8 |
| ISSN (Paper): | 0149-645X |
| DOI: | 10.1109/MWSYM.2009.5165839 |
Regular:
Raman spectroscopy is used to measure the junction temperature of a Cree SiC MESFET as a function of the ambient temperature and DC power. The carrier temperature, which is approximately equal to... View More
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