IEEE - Institute of Electrical and Electronics Engineers, Inc. - Broadband GaN switch mode class E power amplifier for UHF applications

2009 IEEE MTT-S International Microwave Symposium Digest (MTT)

Author(s): Al Tanany, A. ; Sayed, A. ; Boeck, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: Boston, MA, USA, USA
Conference Date: 7 June 2009
Page(s): 761 - 764
ISBN (CD): 978-1-4244-2804-5
ISBN (Paper): 978-1-4244-2803-8
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2009.5165808
Regular:

In this work a broad-band class E power amplifier (PA) is designed, manufactured and measured. 400 MHz bandwidth with a center frequency of 800 MHz was realized using a GaN HEMT device. A novel... View More

Advertisement