IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ku-band AlGaN/GaN-HEMT with over 30% of PAE

2009 IEEE MTT-S International Microwave Symposium Digest (MTT)

Author(s): Takagi, K. ; Takatsuka, S. ; Kashiwabara, Y. ; Teramoto, S. ; Matsushita, K. ; Sakurai, H. ; Onodera, K. ; Kawasaki, H. ; Takada, Y. ; Tsuda, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: Boston, MA, USA, USA
Conference Date: 7 June 2009
Page(s): 457 - 460
ISBN (CD): 978-1-4244-2804-5
ISBN (Paper): 978-1-4244-2803-8
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2009.5165732
Regular:

AlGaN/GaN High Electron Mobility Transistors (HEMTs) were improved for X-band and Ku-band applications. The power added efficiency (PAE) was achieved over 40% for X-band and over 30% for Ku-band.... View More

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