IEEE - Institute of Electrical and Electronics Engineers, Inc. - V-band power amplifier MMICs exhibiting low power slump characteristics utilizing a production released 0.15-um GaAs PHEMT process

2009 IEEE MTT-S International Microwave Symposium Digest (MTT)

Author(s): Campbell, C.F. ; Moochalla, S. ; Daugherty, D. ; Taft, W.J. ; Ming-Yih Kao ; Fanning, D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: Boston, MA, USA, USA
Conference Date: 7 June 2009
Page(s): 433 - 436
ISBN (CD): 978-1-4244-2804-5
ISBN (Paper): 978-1-4244-2803-8
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2009.5165726
Regular:

The design and performance of 0.15-um PHEMT V-band driver and power amplifier MMICs suitable for satellite communication systems is presented. The amplifiers utilize a proven commercially... View More

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