IEEE - Institute of Electrical and Electronics Engineers, Inc. - 4.5 GHz Lamb wave device composed of LiNbO 3 thin film

2009 IEEE MTT-S International Microwave Symposium Digest (MTT)

Author(s): Kadota, M. ; Ogami, T. ; Yamamoto, K. ; Negoro, Y. ; Tochishita, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: Boston, MA, USA, USA
Conference Date: 7 June 2009
Page(s): 333 - 336
ISBN (CD): 978-1-4244-2804-5
ISBN (Paper): 978-1-4244-2803-8
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.2009.5165701
Regular:

A high frequency device of 3 GHz or more is required, for instance, for future 4-th generation mobile phone system in Japan. Using a substrate with a high velocity is one method to realize a high... View More

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