IEEE - Institute of Electrical and Electronics Engineers, Inc. - Future of planar self-aligned block oxide based MOSFET technology

2009 IEEE International Conference on IC Design and Technology (ICICDT)

Author(s): Jyi-Tsong Lin ; Yi-Chuen Eng ; Chih-Hao Kuo ; Tzu-Feng Chang ; Chih-Hung Sun ; Po-Hsieh Lin ; Hsien-Nan Chiu ; Hsuan-Hsu Chen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2009
Conference Location: Austin, TX, USA, USA
Conference Date: 18 May 2009
Page(s): 181 - 184
ISBN (Paper): 978-1-4244-2933-2
ISBN (Online): 978-1-4244-2934-9
DOI: 10.1109/ICICDT.2009.5166291
Regular:

In this paper, we examine the current-voltage (IV) and capacitance-voltage (CV) characteristics of self-aligned (SA), planar block oxide (BO) metal-oxide semiconductor field-effect transistors... View More

Advertisement