IEEE - Institute of Electrical and Electronics Engineers, Inc. - A novel poly-Si thin-film transistor with multi-trenched body by using Isotropic-etching for Suppressing Off-State Leakage

2009 IEEE International Conference on IC Design and Technology (ICICDT)

Author(s): Hsien-Nan Chiu ; Jyi-Tsong Lin ; Yi-Chuen Eng ; Po-Hiesh Lin ; Tzu-Feng Chang ; Chih-Hung Sun ; Chih-Hao Kuo ; Hsuan-Hsu Chen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2009
Conference Location: Austin, TX, USA, USA
Conference Date: 18 May 2009
Page(s): 177 - 179
ISBN (Paper): 978-1-4244-2933-2
ISBN (Online): 978-1-4244-2934-9
DOI: 10.1109/ICICDT.2009.5166290
Regular:

In this study, we propose a novel polysilicon thin-film transistor with multi-trenched body (MTB TFT). According to the ISE-TCAD simulations, our proposed MTB TFT gets a steep subthreshold swing... View More

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