IEEE - Institute of Electrical and Electronics Engineers, Inc. - The negative bias temperature instability vs. high-field stress paradigm

2009 IEEE International Conference on IC Design and Technology (ICICDT)

Author(s): Campbell, J.P. ; Cheung, K.P. ; Suehle, J.S. ; Oates, A.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2009
Conference Location: Austin, TX, USA, USA
Conference Date: 18 May 2009
Page(s): 79 - 82
ISBN (Paper): 978-1-4244-2933-2
ISBN (Online): 978-1-4244-2934-9
DOI: 10.1109/ICICDT.2009.5166270
Regular:

A new and more accurate fast-IDVG measurement methodology is utilized to examine the transient degradation and recovery associated with the negative-bias temperature instability (NBTI). The... View More

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