IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low-leakage electrostatic discharge protection circuit in 65-nm fully-silicided CMOS technology

2009 IEEE International Conference on IC Design and Technology (ICICDT)

Author(s): Chang-Tzu Wang ; Ming-Dou Ker ; Tien-Hao Tang ; Kuan-Cheng Su
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2009
Conference Location: Austin, TX, USA, USA
Conference Date: 18 May 2009
Page(s): 21 - 24
ISBN (Paper): 978-1-4244-2933-2
ISBN (Online): 978-1-4244-2934-9
DOI: 10.1109/ICICDT.2009.5166256
Regular:

A new low-leakage power-rail electrostatic discharge (ESD) clamp circuit, composed of the SCR device and new ESD detection circuit, has been designed with consideration of gate current to reduce... View More

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