IEEE - Institute of Electrical and Electronics Engineers, Inc. - Sub-100nm high-K metal gate GeOI pMOSFETs performance: Impact of the Ge channel orientation and of the source injection velocity

2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)

Author(s): C. Le Royer ; C. Tabone ; B. Previtali ; R. Truche ; F. Allain ; A. Pouydebasque ; K. Romanjek ; V. Barral ; M. Vinet ; J.-M. Hartmann ; E. Augendre ; H. Grampeix ; L. Lachal
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2009
Conference Location: Hsinchu, Taiwan
Conference Date: 27 April 2009
Page(s): 145 - 146
ISBN (CD): 978-1-4244-2785-7
ISBN (Paper): 978-1-4244-2784-0
ISSN (Paper): 1524-766X
DOI: 10.1109/VTSA.2009.5159331
Regular:

We report here experimental investigations on GeOI pMOSFET: Besides the +65% mobility enhancement in narrow channel GeOI pMOSFETs as compared to wide channels, attributed to improved sidewall... View More

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