IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ge shallow junction formation by As implantation and flash lamp annealing

2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)

Author(s): Osada, K. ; Fukunaga, T. ; Shibahara, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2009
Conference Location: Hsinchu, Taiwan, Taiwan
Conference Date: 27 April 2009
Page(s): 15 - 16
ISBN (CD): 978-1-4244-2785-7
ISBN (Paper): 978-1-4244-2784-0
ISSN (Paper): 1930-885X
DOI: 10.1109/VTSA.2009.5159271
Regular:

Shallow, about 20 nm, depth n+/p junction of Ge was successfully fabricated by As+ implantation and FLA. Since the junction depth was limited by implantation energy, much... View More

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