IEEE - Institute of Electrical and Electronics Engineers, Inc. - YFET - Trench superjunction process window extended

2009 21st International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Author(s): Hirler, F. ; Kapels, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: Barcelona, Spain, Spain
Conference Date: 14 June 2009
Page(s): 299 - 302
ISBN (CD): 978-1-4244-4673-5
ISBN (Paper): 978-1-4244-3525-8
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2009.5158061
Regular:

The drift zone of superjunction devices consists of compensated n- and p-columns. The manufacturability of such devices is based on the thorough control of acceptors and donator concentrations.... View More

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