IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication of trench isolation and trench power MOSFETs in a smart power IC Technology with a single trench unit process

2009 21st International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Author(s): Kadow, C. ; Decker, S. ; Dibra, D. ; Krischke, N. ; Lanzerstorfer, S. ; Maier, H. ; Meyer, T. ; Vannucci, N. ; Zink, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: Barcelona, Spain, Spain
Conference Date: 14 June 2009
Page(s): 224 - 226
ISBN (CD): 978-1-4244-4673-5
ISBN (Paper): 978-1-4244-3525-8
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2009.5158042
Regular:

We report on using a single trench unit process for the trench isolation and for the trench power MOSFET of a common-drain smart power IC technology. The trench power MOSFET has a maximum specific... View More

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