IEEE - Institute of Electrical and Electronics Engineers, Inc. - Interconnect failure due to voltage and humidity in a 30V BCD technology

2009 21st International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Author(s): Disney, D. ; Blattner, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2009
Conference Location: Barcelona, Spain, Spain
Conference Date: 14 June 2009
Page(s): 212 - 215
ISBN (CD): 978-1-4244-4673-5
ISBN (Paper): 978-1-4244-3525-8
ISSN (Paper): 1943-653X
DOI: 10.1109/ISPSD.2009.5158039
Regular:

This paper describes a failure mechanism that caused open-circuit failures in the interconnect layers of several ICs fabricated in a 30V Bipolar-CMOS-DMOS (BCD) technology under highly-accelerated... View More

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