IEEE - Institute of Electrical and Electronics Engineers, Inc. - Defect reduction in ArF immersion lithography, using particle trap wafers with CVD thin films

2009 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2009)

Author(s): Y. Matsui ; N. Onoda ; S. Nagahara ; T. Uchiyama
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2009
Conference Location: Berlin, Germany
Conference Date: 10 May 2009
Page(s): 237 - 240
ISBN (CD): 978-1-4244-3615-6
ISBN (Paper): 978-1-4244-3614-9
ISSN (Electronic): 2376-6697
ISSN (Paper): 1078-8743
DOI: 10.1109/ASMC.2009.5155991
Regular:

Particle trap wafers were applied to ArF immersion lithography to reduce the immersion related defectivity. Interfacial free energy (gamma) and work of adhesion (W) between particle trap wafers... View More

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