IEEE - Institute of Electrical and Electronics Engineers, Inc. - Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations

2009 13th International Workshop on Computational Electronics (IWCE 2009)

Author(s): S. E. Tyaginov ; V. Sverdlov ; W. Gos ; T. Grasser
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2009
Conference Location: Beijing, China
Conference Date: 27 May 2009
Page(s): 1 - 4
ISBN (CD): 978-1-4244-3927-0
ISBN (Paper): 978-1-4244-3925-6
DOI: 10.1109/IWCE.2009.5091156
Regular:

The McPherson model for the Si-O bond-breakage has been extended in a manner to capture the effect of O-Si-O angle variations on the breakage rate. Using a distribution function of the O-Si-O bond... View More

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