IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling of Junction Temperature and Current Flow in High Power InGaN/GaN Light Emission Diodes Using Finite Element Methods

2009 13th International Workshop on Computational Electronics (IWCE 2009)

Author(s): Chi-Kang Li ; Yuh-Renn Wu ; Jasprit Singh
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2009
Conference Location: Beijing, China
Conference Date: 27 May 2009
Page(s): 1 - 4
ISBN (CD): 978-1-4244-3927-0
ISBN (Paper): 978-1-4244-3925-6
DOI: 10.1109/IWCE.2009.5091121
Regular:

InGaN/GaN LEDs offer important lighting devices for human livings. These devices have high efficiency and lifetimes at low injection power but so far show degradation under high injection... View More

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