IEEE - Institute of Electrical and Electronics Engineers, Inc. - Device Performance of Graphene Nanoribbon Field Effect Transistors with Edge Roughness Effects: A Computational Study

2009 13th International Workshop on Computational Electronics (IWCE 2009)

Author(s): Zuan-Yi Leong ; Kai-Tak Lam ; Gengchiau Liang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2009
Conference Location: Beijing, China
Conference Date: 27 May 2009
Page(s): 1 - 4
ISBN (CD): 978-1-4244-3927-0
ISBN (Paper): 978-1-4244-3925-6
DOI: 10.1109/IWCE.2009.5091104
Regular:

The device performance of armchair edge graphene nanoribbon Schottky barrier field effect transistors (A-GNR SBFETs) over different edge roughness and widths are investigated over a wide range of... View More

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