IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thermal-Assisted Spin Transfer Torque Memory (STT-RAM) Cell Design Exploration

2009 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)

Author(s): Hai Li ; Haiwen Xi ; Yiran Chen ; Stricklin, J. ; Xiaobin Wang ; Tong Zhang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2009
Conference Location: Tampa, Florida, USA, USA
Conference Date: 13 May 2009
Page(s): 217 - 222
ISBN (CD): 978-0-7695-3684-2
ISBN (Paper): 978-1-4244-4408-3
DOI: 10.1109/ISVLSI.2009.17
Regular:

Thermal-assisted spin-transfer torque random access memory (STT-RAM) has been considered as a promising candidate of next-generation nonvolatile memory technology. We conducted finite element... View More

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