IEEE - Institute of Electrical and Electronics Engineers, Inc. - A novel contact process for power MOSFET's

Author(s): G. Chen ; S. Sapp ; N. Wylie ; C. Hu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1986
Volume: 7
Page(s): 672 - 673
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/EDL.1986.26515
Regular:

A novel technique of making electrical contact to the p diffusions of a DMOS power transistor by over-sintering the aluminum/ silicon contact is reported. The potential advantages are the... View More

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