IEEE - Institute of Electrical and Electronics Engineers, Inc. - An electrical method to measure SOI film thicknesses

Author(s): J. Whitfield ; S. Thomas
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 1986
Volume: 7
Page(s): 347 - 349
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/EDL.1986.26396
Regular:

Others have identified three normal operating regions for silicon-on-insulator (SOI) MOSFET's. In two of these regions the threshold voltage depends on the silicon film thickness and the... View More

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