IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hot-carrier-induced degradation in p-channel LDD MOSFET's

Author(s): J.J. Tzou ; C.C. Yao ; R. Cheung ; H.W.K. Chan
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1986
Volume: 7
Page(s): 5 - 7
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/EDL.1986.26273
Regular:

When the p-channel MOSFET is stressed near the maximum substrate current Isub, the lifetime t (5-percent increase in the transconductance) followstI_{sub} = A(I_{sub}/I_{d})^{-n}, with n =... View More

Advertisement