IEEE - Institute of Electrical and Electronics Engineers, Inc. - Optimization of the self-aligned GaAs MESFET with the multilayer dielectric “dummy gate“ for a high power microwave applications

2009 International Siberian Conference on Control and Communications (SIBCON 2009)

Author(s): Arykov, V.S. ; Gavrilova, A.M. ; Kagadei, V.A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2009
Conference Location: Tomsk, Russia, Russia
Conference Date: 27 March 2009
Page(s): 238 - 243
ISBN (Paper): 978-1-4244-2007-0
DOI: 10.1109/SIBCON.2009.5044863
Regular:

The results of the influence of GaAs MESFET geometry on the transistor parameters have been presented. The self-aligned ion implantation process with the multilayer SiO2 "dummy gate" for the... View More

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