IEEE - Institute of Electrical and Electronics Engineers, Inc. - Microwave operation of sub-micrometer gate surface channel MESFETs in polycystalline diamond

2009 German Microwave Conference (GeMIC 2009)

Author(s): Calvani, P. ; Corsaro, A. ; Sinisi, F. ; Rossi, M.C. ; Conte, G. ; Giovine, E. ; Limiti, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2009
Conference Location: Munich, Germany, Germany
Conference Date: 16 March 2009
Page(s): 1 - 4
ISBN (CD): 978-3-8007-3150-3
ISBN (Paper): 978-3-9812668-0-1
DOI: 10.1109/GEMIC.2009.4815891
Regular:

Metal-Semiconductor field effect transistor (MESFETs) were fabricated on hydrogen-terminated polycrystalline diamond. Fabricated MESFETs typically showed high drain-source current (140 mA/mm) and... View More

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