IEEE - Institute of Electrical and Electronics Engineers, Inc. - A charge-sheet analysis of short-channel enhancement-mode MOSFETs

Author(s): C. Turchetti ; G. Masetti
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1986
Volume: 21
Page(s): 267 - 275
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/JSSC.1986.1052514
Regular:

A charge-sheet analysis of the short-channel MOSFET is presented. The expression achieved for the drain current, which takes into account both the drift and the diffusion components and also... View More

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