IEEE - Institute of Electrical and Electronics Engineers, Inc. - Monte Carlo Study of an InAlAs/InGaAs Velocity Modulation Transistor

2009 Spanish Conference on Electron Devices (CDE)

Author(s): Vasallo, B.G. ; Gonzalez, T. ; Pardo, D. ; Mateos, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2009
Conference Location: Santiago de Compostela, Spain, Spain
Conference Date: 11 February 2009
Page(s): 128 - 131
ISBN (CD): 978-1-4244-2839-7
ISBN (Paper): 978-1-4244-2838-0
DOI: 10.1109/SCED.2009.4800447
Regular:

We report a Monte Carlo study of an InP-based InAlAs/InGaAs Velocity Modulation Transistor (VMT) based on the Double-Gate High Electron Mobility Transistor (DG-HEMT), a HEMT with two opposite... View More

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