IEEE - Institute of Electrical and Electronics Engineers, Inc. - Temperature dependence of bistable InGaAsP/InP lasers

Author(s): Hai-feng Liu ; T. Kamiya ; Bao-xun Du
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1986
Volume: 22
Page(s): 1,579 - 1,586
ISSN (Paper): 0018-9197
ISSN (Online): 1558-1713
DOI: 10.1109/JQE.1986.1073159
Regular:

An increase of hysteresis current width in bistable lasers with two or three sections was observed at higher temperatures. A rate equation analysis was performed where both carrier density... View More

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