IEEE - Institute of Electrical and Electronics Engineers, Inc. - Super steep subthreshold slope PN-body tied SOI FET with ultra low drain voltage down to 0.1V

2015 IEEE International Electron Devices Meeting (IEDM)

Author(s): Jiro Ida ; Takayuki Mori ; Yousuke Kuramoto ; Takashi Horii ; Takahiro Yoshida ; Kazuma Takeda ; Hiroki Kasai ; Masao Okihara ; Yasuo Arai
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2015
Conference Location: Washington, DC, USA
Conference Date: 7 December 2015
ISBN (Electronic): 978-1-4673-9894-7
ISBN (USB): 978-1-4673-9893-0
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2015.7409761
Regular:

We propose and demonstrate a super steep Subthreshold Slope (SS) new type SOI FET with a PN-body tied structure. It has a symmetry source and drain (S/D) structure. The device shows a super steep... View More

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