IEEE - Institute of Electrical and Electronics Engineers, Inc. - Sub-60mV-swing negative-capacitance FinFET without hysteresis

2015 IEEE International Electron Devices Meeting (IEDM)

Author(s): Kai-Shin Li ; Pin-Guang Chen ; Tung-Yan Lai ; Chang-Hsien Lin ; Cheng-Chih Cheng ; Chun-Chi Chen ; Yun-Jie Wei ; Yun-Fang Hou ; Ming-Han Liao ; Min-Hung Lee ; Min-Cheng Chen ; Jia-Min Sheih ; Wen-Kuan Yeh ; Fu-Liang Yang ; Sayeef Salahuddin ; Chenming Hu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2015
Conference Location: Washington, DC, USA
Conference Date: 7 December 2015
ISBN (Electronic): 978-1-4673-9894-7
ISBN (USB): 978-1-4673-9893-0
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2015.7409760
Regular:

In this work, we report the first Negative-Capacitance FinFET. ALD Hf042Zr058O2 is added on top of the FinFET's gate stack. The test devices have a floating... View More

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