IEEE - Institute of Electrical and Electronics Engineers, Inc. - Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off <0.2V, and hysteresis-free strategies

2015 IEEE International Electron Devices Meeting (IEDM)

Author(s): M. H. Lee ; P.-G Chen ; C. Liu ; K.-Y Chu ; C.-C Cheng ; M.-J Xie ; S.-N Liu ; J.-W Lee ; S.-J Huang ; M.-H Liao ; M. Tang ; K.-S Li ; M.-C Chen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2015
Conference Location: Washington, DC, USA
Conference Date: 7 December 2015
ISBN (Electronic): 978-1-4673-9894-7
ISBN (USB): 978-1-4673-9893-0
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2015.7409759
Regular:

Ferroelectric HfZrOx (FE-HZO) FETs is experimentally demonstrated with 0.98nm CET (capacitance equivalent thickness), small hysteresis window VT (threshold voltage) shift <; 0.1V,... View More

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