IEEE - Institute of Electrical and Electronics Engineers, Inc. - Long Term Transient Radiation Response of GaAs FETs Fabricated on an AlGaAs Buffer Layer

Author(s): W. T. Anderson ; M. Simons ; W. F. Tseng
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1986
Volume: 33
Page(s): 1,442 - 1,446
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.1986.4334620
Regular:

A radiation hardening method for GaAs FETs has been developed using an AlGaAs buffer layer. The long term transient response resulting from irradiation with 40 MeV electrons and flash x-rays was... View More

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