IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of buffer concentration on sensing performances of ion-sensitive field-effect transistors wth si-nanowires

2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)

Author(s): ChanOh Park ; Kihyun Kim ; Meyya Meyyappan ; DongHoon Kim ; Nanki Hong ; Jeong-Soo Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2015
Conference Location: Rome, Italy
Conference Date: 27 July 2015
Page(s): 1,335 - 1,338
ISBN (Electronic): 978-1-4673-8156-7
ISBN (USB): 978-1-4673-8155-0
DOI: 10.1109/NANO.2015.7388881
Regular:

We have experimentally investigated the effect of buffer-dilution on sensing characteristics of the Si-nanowire (Si-NW) ion-sensitive field-effect transistors (ISFETs). Phosphate-buffered saline... View More

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