IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improving reliability, performance, and energy efficiency of STT-MRAM with dynamic write latency

2015 33rd IEEE International Conference on Computer Design (ICCD)

Author(s): Ali Ahari ; Mojtaba Ebrahimi ; Fabian Oboril ; Mehdi Tahoori
Sponsor(s): IEEE
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2015
Conference Location: New York, NY, USA
Conference Date: 18 October 2015
Page(s): 109 - 116
ISBN (Electronic): 978-1-4673-7166-7
ISBN (USB): 978-1-4673-7165-0
DOI: 10.1109/ICCD.2015.7357091
Regular:

High write latency and high write energy are the major challenges in Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) design. The write operation in STT-MRAM is of stochastic nature.... View More

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