IEEE - Institute of Electrical and Electronics Engineers, Inc. - Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric

2015 IEEE Regional Symposium on Micro- and Nanoelectronics (RSM)

Author(s): Siti Kudnie Sahari ; Nik Amni Fathi Nik Zaini Fathi ; Norsuzailina Mohammad Sutan ; Rohana Sapawi ; Azrul Azlan B. Hamzah ; Burhanuddin Yeop Majlis
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2015
Conference Location: Kuala Terengganu, Malaysia
Conference Date: 19 August 2015
Page(s): 1 - 3
ISBN (Electronic): 978-1-4799-8550-0
ISBN (USB): 978-1-4799-8549-4
DOI: 10.1109/RSM.2015.7355015
Regular:

This paper investigates and discusses the effect of wet chemical cleaning; Hydrochloric Acid (HCl) and Hydrofluoric Acid (HF) to the growth of interfacial layer between high-k material (Al2O3) and... View More

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