IEEE - Institute of Electrical and Electronics Engineers, Inc. - Photo-carrier generation at a-Si layer in SiNx/a-Si stacked passivation with extremely low surface recombination velocity

2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC)

Author(s): Koichi Koyama ; Koichi Higashimine ; Keisuke Ohdaira ; Hideki Matsumura
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2015
Conference Location: New Orleans, LA, USA
Conference Date: 14 June 2015
Page(s): 1 - 3
ISBN (Electronic): 978-1-4799-7944-8
ISBN (DVD): 978-1-4799-7943-1
DOI: 10.1109/PVSC.2015.7356327
Regular:

This is to study on the feasibility of photo-carrier generation at amorphous-silicon (a-Si) insertion layer in silicon-nitride (SiNx)/a-Si stacked passivation system, which realizes... View More

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